Tuesday, January 15, 2019
Science and Technology Research News
Imec Develops 3D-Compatible Germanium nMOS Gate stack with High Mobility and...
December 8, 2016
Today’s results were achieved by band engineering using an interface dipole at high-k/SiO2 interface, and a H2 high-pressure anneal (HPA) finalizing the process flow....
The Science and Technology Behind Tomorrow's Innovations
© Copyright 2018 - Science and Technology Research News
Edit with Live CSS